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產(chǎn)品中心> TRANSCOM> Hybrid ICs> Hybrid ICs of FET with Single-Bias>


Product No. Freq. P-1dB Gain IP3 PAE N.F. EVB S Package Notes
(GHz) (dBm) (dB) (dBm) (%) (dB) Parameters
TC3843 0.87-0.925 24 19 36 26 1.1 SMT (ceramic)
TC3843A 1.71-1.785 24 16 36 26 1.1 SMT (ceramic) 50ohm-matched Single-Bias
TC3911 6 17 13 1.5~1.8 3.5V SOT143R (plastic) Super low noise
TC3918 12 18 13 0.7~1.2 4.0V Micro-X (ceramic) Super low noise
TC3921 6 22 12 5.0V SOT143R (plastic) low noise FET
TC3928 12 21.5 12 0.9~1.5 Micro-X (ceramic) low noise FET
TC3938 12 24 8 1.0~1.5 5.0V Micro-X (ceramic) Medium power
TC3943 5-10 27 >6 37 30 dxf_file SMT (ceramic) Prematched 0.5W FET
TC3947 6 27 12 37 35 Cu (ceramic) 0.5W FET
TC3957 6 30 10 40 35 Cu (ceramic) 1W FET
TC3953 5-8 30 >7 40 35 dxf_file SMT (ceramic) Prematched 1W FET
TC3953A 5-10 30 >5.5 40 35 dxf_file SMT (ceramic) Prematched 1W FET
TC3967 2.45 33 13 43 35 Cu (ceramic) 2W FET
TC3879 2.45 38.5 10.5 48.5 35 Flange (ceramic) 7W FET
TC3977 2.45 35.5 12 45 35 Cu (ceramic) Prematched 3W FET